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| BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation makes it ideal for linear applications. A base terminal is available to enable biasing and sensitivity control. Features D D D D D D D D D Hermetically sealed TO-18 case Lens window Angle of half sensitivity = 15 Exact central chip alignment Base terminal available Very high photo sensitivity High linearity Suitable for visible and near infrared radiation Selected into sensitivity groups 94 8402 Applications Detector for analogue and digital applications in industrial electronics, measuring and control, e.g. long range light barriers with additional optics, optical switches, alarm systems. Absolute Maximum Ratings Tamb = 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Symbol VCBO VCEO VEBO IC ICM Ptot Tj Top Tstg Tsd RthJA RthJC Value 80 70 7 50 200 250 125 -55...+125 -55...+125 260 400 150 Unit V V V mA mA mW C C C C K/W K/W tp 10 ms Tamb 25 C x x t 5 s, distance from touching border 2 mm x y Document Number 81534 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 1 (6) BPX43 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Emitter Base Capacitance Collector Base Capacitance Collector Light Current Temp. Coefficient of Ica Base Light Current Test Conditions IC = 1 mA VCE = 25 V, E = 0 VCE = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 Ee = 0.5 mW/cm2, l = 950 nm, VCE = 5 V l = 950 nm Ee = 0.5 mW/cm2, l = 950 nm, VCB = 5 V Symbol V(BR)CE O Min 70 Typ Max Unit V nA pF pF pF mA %/K ICEO CCEO CEBO CCBO Ica TKIca Iba 10 23 47 41 0.8 1 10 15 920 630...1040 0.15 200 mA Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Ee = 0.5 mW/cm2, Voltage l = 950 nm, IC = 0.1 mA lp l0.5 VCEsat 0.3 deg nm nm V Type Dedicated Characteristics Tamb = 25_C Parameter Current Gain Test Conditions VCE= 5 V, IC = 1 mA Type BPX38-4 BPX38-5 BPX38-6 BPX38-4 BPX38-5 BPX38-6 BPX38-4 BPX38-5 BPX38-6 Symbol B B B Ica Ica Ica tr, tf tr, tf tr, tf Min Typ 330 520 650 0.7 1.25 2 15 20 25 Max Unit Collector Light Current Ee=0.5 mW/cm2, g l=950nm, VCE=5V Rise Time/ Fall Time VCE=5V, IC=1mA, RL=1kW l=820nm 0.5 0.8 1.25 1.0 1.6 mA mA mA ms ms ms www.vishay.de * FaxBack +1-408-970-5600 2 (6) Document Number 81534 Rev. 2, 20-May-99 BPX43 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 800 P tot - Total Power Dissipation ( mW ) Ica - Collector Light Current ( mA ) 100 6 5 10 4 1 600 RthJC 400 200 RthJA 0 0 25 50 75 100 125 150 0.1 VCE=5V l=950nm 0.1 1 10 0.01 0.01 94 8369 94 8342 Tamb - Ambient Temperature ( C ) Ee - Irradiance ( mW / cm2 ) Figure 1. Total Power Dissipation vs. Ambient Temperature 106 I CEO - Collector Dark Current ( nA ) 105 104 103 102 101 100 20 94 8343 Figure 4. Collector Light Current vs. Irradiance 10 Ica - Collector Light Current ( mA ) BPX 43-5 l=950nm Ee=1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 1 0.1 mW/cm2 0.05 mW/cm2 VCE=20V E=0 0.02 mW/cm2 0.1 50 100 150 94 8370 0.1 1 10 100 Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 2. Collector Dark Current vs. Ambient Temperature 3.5 I ca rel - Relative Collector Current 3.0 B - Amplification 2.5 2.0 1.5 1.0 0.5 0 0 94 8344 Figure 5. Collector Light Current vs. Collector Emitter Voltage 800 6 VCE=5V Ee=1mW/cm2 l=950nm 600 5 400 4 200 VCE=5V 0 0.01 94 8363 50 100 150 0.1 1 10 100 Tamb - Ambient Temperature ( C ) IC - Collector Current ( mA ) Figure 3. Relative Collector Current vs. Ambient Temperature Figure 6. Amplification vs. Collector Current Document Number 81534 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 3 (6) BPX43 Vishay Telefunken CCBO - Collector Base Capacitance ( pF ) S ( l ) rel - Relative Spectral Sensitivity 100 94 8367 50 40 1.0 0.8 0.6 0.4 0.2 0 400 f=1MHz 30 20 10 0 0.1 1 10 600 800 1000 94 8364 VCB - Collector Base Voltage ( V ) l - Wavelength ( nm ) Figure 7. Collector Base Capacitance vs. Collector Base Voltage CEBO - Emitter Base Capacitance ( pF ) 80 f=1MHz 60 Figure 10. Relative Spectral Sensitivity vs. Wavelength 0 10 20 30 S rel - Relative Sensitivity 40 1.0 0.9 0.8 0.7 50 60 70 80 40 20 0 0.1 93 8365 1 VEB - Emitter Base Voltage ( V ) 10 94 8371 0.6 0.4 0.2 0 0.2 0.4 0.6 Figure 8. Emitter Base Capacitance vs. Emitter Base Voltage C CEO - Collector Emitter Capacitance ( pF ) 50 40 f=1MHz Figure 11. Relative Radiant Sensitivity vs. Angular Displacement 30 20 10 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) 94 8366 Figure 9. Collector Emitter Capacitance vs. Collector Emitter Voltage www.vishay.de * FaxBack +1-408-970-5600 4 (6) Document Number 81534 Rev. 2, 20-May-99 BPX43 Vishay Telefunken Dimensions in mm 96 12178 Document Number 81534 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 5 (6) BPX43 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 6 (6) Document Number 81534 Rev. 2, 20-May-99 |
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